Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth time on these defects has been analyzed and on the basis of this it has been possible to grow Hg1−xCdxI2 layers with low defect [email protected]

Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor [email protected]

Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values

Effect of Yb concentration on the resistivity and lifetime of CdTe:Ge:Yb codoped crystals

The resistivity and electron lifetime of CdTe:Ge:Yb crystals are reported, demonstrating that the effect of Yb concentration is crucial for accurate electrical compensation. It is also demonstrated that the codoping of CdTe with Ge as deep donor and with Yb as rare-earth element could be a promising way to obtain semiinsulating CdTe crystals with good transport properties. High resistivity 5 10 9 cm and lifetime 9 s were obtained, thus confirming the beneficial effect of rare-earth dopingThis work has been partly supported by the projects CAM SENSORCDT S-0505/MAT/0209, CAM FOTOFLEX S-0505/ENE-123, and EU FP6 PHOLOGIC 017158. E.S. also acknowledges the Spanish MEC for the fellowship FPU 2003-1388.Peer reviewe

Cathodoluminescence study of the effect of annealing in HgI_2 vapor on the defect structure of CdTe

The origin and spatial distribution of radiative defects in undoped and Ge-doped CdTe wafers have been studied by CL spectroscopy and imaging techniques in the scanning electron microscope (SEM) before and after the wafer annealing in HgI2 vapor. The annealing procedure has been carried out under isothermal conditions at 250 degrees C for 24 h for or for 48 h. It has been shown that the annealing results in the growth of alpha-HgI2 polycrystalline layer on the wafer surface, and this layer acts as a getter for Te precipitates distributed randomly over the whole volume of the as-grown CdTe wafers. The annealing affects mainly the CL bands related with Te vacancies (band at about 1.00 eV) and Ge dopant (0.82 and 0.89 eV bands). The contribution of the latter to the total luminescence emission of CdTe wafers decreases after the annealing. The quality improvement of CdTe wafers, revealed by the elimination of Te precipitates from the wafer bulk, has been shown to be an important result of the annealing procedure

Cathodoluminescence characterization of Ge-doped CdTe crystals

Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions